Analytical modelling and performance analysis of Double-Gate MOSFET-based circuit including ballistic/quasi-ballistic effects
نویسندگان
چکیده
In this paper we present a compact model of DoubleGate MOSFET architecture including ballistic and quasiballistic transport down to 20 nm channel length. In addition, this original model takes into account short channel effects (SCE/DIBL) by a simple analytical approach. The quasi-ballistic transport description is based on Lundstrom’s backscattering coefficient given by the socalled flux method. We also include an original description of scattering of processes by introducing the “dynamical mean free path” formalism. Finally, we implemented our model in a Verilog-A environment, and applied it to the simulation of circuit elements such as CMOS inverters and Ring Oscillators to analyze the impact of ballistic and quasi-ballistic transport on circuit performances.
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